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BCR08AM Datasheet, PDF (4/6 Pages) Renesas Technology Corp – LOW POWER USE PLANAR PASSIVATION TYPE
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GATE CHARACTERISTICS
3
2
101
VGM = 6V
7
5
3 VGT
2
100
7
5
IRGT I
3
IRGT III
2
PGM = 1W
PG(AV) =
0.1W
IGM =
0.5A
10–1
7
5
VGD = 0.1V
3
3 5 7 101 2 3 5 7 102 2 3 5 7103
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
103
7
TYPICAL EXAMPLE
5
3
2
102
7
5
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
MAXIMUM ON-STATE POWER
DISSIPATION
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
0.2 0.4 0.6 0.8 1.0 1.2 1.4
RMS ON-STATE CURRENT (A)
MITSUBISHI SEMICONDUCTOR <TRIAC>
BCR08AM
LOW POWER USE
PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
7
TYPICAL EXAMPLE
5
3
2
102
7
5
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
102 2 3 5 7103 2 3 5 7104 2 3 5 7105
3
2
JUNCTION TO AMBIENT
102
7
5
JUNCTION TO CASE
3
2
101
7
5
3
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CURVES APPLY REGARDLESS
140
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
120
100
80
60
360°
40 CONDUCTION
RESISTIVE,
20 INDUCTIVE
LOADS
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RMS ON-STATE CURRENT (A)
Mar. 2002
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