2SK1837 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET

2SK1837
Reverse Drain Current vs.
Source to Drain Voltage
100
Pulse Test
80
60
40
20
VGS = 10 V
0, – 5 V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1
0.5
0.3
0.2
0.1
0.1
0.05
0.02
0.03
0.01
1 shot Pulse
0.01
10 µ
100 µ
Tc = 25°C
1m
10 m
Pulse Width PW (S)
θch – c(t) = γs(t) • θch – c
θch – c = 0.5°C / W, Tc = 25°C
P DM
D
=
PW
T
PW
T
100 m
1
10
Switching Time Test Circuit
Vin Monitor
D.U.T
Vout Monitor
RL
Vin
10 V
50 Ω
V_DD
= 30 V
Waveforms
90 %
Vin
10 %
Vout
10 %
10 %
td _(on)
90 %
90 %
tr
td _(off)
tf
Rev.2.00 Sep 07, 2005 page 5 of 6