2SK1837 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET

2SK1837
Static Drain to Source on State
Resistance vs. Temperature
0.5
Pulse Test
0.4
0.3
0.2
I D = 50 A
20 A
0.1
10 A
0
–40
0
40 80 120 160
Case Temperature T_C (°C)
1000
500
Body to Drain Diode Reverse
Recovery Time
200
100
50
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
20
10
0.5 1 2
5 10 20 50
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
500
20
VDD = 100 V
400
250 V
16
400 V
300
VGS
12
VDS
200
8
100
0
V DD = 400 V
250 V
100 V
80 160 240
I_D = 50 A
4
0
320 400
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
Tc = – 25°C
20
25°C
10
75°C
5
2
1 _{VDS = 20 V}
Pulse Test
0.5
0.5 1 2
5 10 20 50
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1000
Ciss
100
V_GS = 0
f = 1 MHz
Crss
10
0
10
20
30
40
50
Drain to Source Voltage V_DS (V)
Switching Characteristics
5000
2000
V_GS = 10 V, V_DD = 30 V
PW = 2 µs, duty ≤ 1 %
1000
500
td _(off)
tf
200
tr
100
td _(on)
50
0.5 1 2
5 10 20 50
Drain Current I_D (A)
Rev.2.00 Sep 07, 2005 page 4 of 6