2SK1837 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET

2SK1837
Main Characteristics
Power vs. Temperature Derating
400
300
200
100
0
50
100
150
200
Case Temperature T_C (°C)
Typical Output Characteristics
100
8V
10 V
80
Pulse Test
60
6V
5.5 V
40
5V
20
4.5 V
V GS = 4 V
0
4
8
12 16
20
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
50 A
4
Pulse Test
3
2
20 A
1
ID = 10 A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
1000
300
100
30
10
3
1
Operation in this area
is limited by R_DS(on)
1001m0 _s^µ _s
DC
PW
Operation
=(T1c0=m21s5m_{°(1Cs)shot)}
0.3 ^{Ta = 25°C}
0.1
1 3 10 30 100 300 1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
100
80
VDS = 20 V
Pulse Test
60
40
20
Tc = 75°C
25°C
– 25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
0.05
V GS = 10, 15 V
0.02
0.01
5 10 20
50 100 200 500
Drain Current I_D (A)