2SK1762 Datasheet, PDF (5/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1762
Reverse Drain Current vs.
Source to Drain Voltage
20
Pulse Test
16
12
8
4 _{VGS = 10 V}
0, – 5 V
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1.0
0.5
0.3 _0.2
0.1
0.1
0.05
0.02
0.03
0.01
0.01
1 shot Pulse
10 µ
100 µ
Tc = 25°C
θch – c(t) = γs(t) • θch – c
θch – c = 3.57°C / W. Tc = 25°C
P DM
D
=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Rev.2.00 Sep 07, 2005 page 5 of 6