2SK1762 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1762
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
50
100
150
200
Case Temperature T_C (°C)
Typical Output Characteristics
20
10 V 6 V
Pulse Test
16
5.5 V
12
5V
8
4.5 V
4
V_GS = 4 V
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
4
3
10 A
2
5A
1
I_D = 2 A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
100
30
10
3
1
0.3
OispliemraitetiodnbDiynCRtOPh_D^pWi_S^esr₍^=a_oat_n^1iro₎^{0enam(Ts1c(m1=s1s20h50o}_°Ct^µ))s
0.1 _{Ta = 25°C}
0.05
1 3 10 30 100 300 1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
10
8
V_DS = 10 V
Pulse Test
6
Tc = 75°C
4
25°C
– 25°C
2
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1
0.5
V_GS = 10 V
0.2
15 V
0.1
0.05
0.5 1 2
5 10 20 50
Drain Current I_D (A)