2SK1762 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1762
Static Drain to Source on State
Resistance vs. Temperature
1.0
0.8 ^{Pulse Test}
V_GS = 10 V
0.6
0.4
0.2
I_D = 10 A
5A
2A
0
– 40 0
40 80 120 160
Case Temperature T_C (°C)
Body to Drain Diode Reverse
Recovery Time
500
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
200
100
50
20
10
5
0.2 0.5 1 2
5 10 20
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
500
20
I_D = 12 A
400
16
300
V_DS
200
V_GS
12
V_DD = 200 V
100 V
50 V
8
100
0
0
V_DD = 200 V
4
100 V
50 V
0
8
16 24 32 40
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
V_DS = 10 V
Pulse Test
20
Tc = –25°C
10
5
75°C
25°C
2
1
0.5
0.1 0.2 0.5 1 2
5 10
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
Ciss
1000
Coss
100
Crss
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500 _{VGS = 10 V, VDD =.. 30 V}
PW = 2 µs, duty ≤ 1 %
200
t_{d (off)}
100
50
t_f
t_r
20
t_{d (on)}
10
5
0.1 0.2 0.5 1 2
5 10
Drain Current I_D (A)
Rev.2.00 Sep 07, 2005 page 4 of 6