2SK1629-E1-E_15 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – 500V - 30A - MOS FET High Speed Power Switching

2SK1629-E1-E
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1
0.5
0.3
0.2
0.1
0.1
0.05
0.02
0.03
0.01
1shot
pulse
0.01
10 μ
100 μ
1m
Tc = 25°C
θch – c (t) = γ s (t) • θch – c
θch – c = 0.625°C/W, Tc = 25°C
P_DM
D = ^PW
T
PW
T
10 m
100 m
1
10
Pulse Width PW (s)
Preliminary
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout
Monitor
R_L
Vin
10 V
50 Ω
V_DD
= 30 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
90%
tr
td(off)
tf
R07DS1197EJ0200 Rev.2.00
Mar 26, 2014
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