2SK1629-E1-E_15 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – 500V - 30A - MOS FET High Speed Power Switching

2SK1629-E1-E
10000
Typical Capacitance
vs. Drain to Source Voltage
V_GS = 0
f = 1 MHz
Ciss
1000
Coss
100
Crss
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
20
16
12
8
4
V_GS = 0
Ta = 25°C
Pulse Test
0
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Preliminary
Dynamic Input Characteristics
800
I_D = 20 A
Ta = 25°C
16
V_GS
600
12
V_DS
400
V_DD = 400 V
250 V
100 V ⁸
200
0
0
4
V_DD = 400 V
250 V
100 V
0
20 40 60 80 100 120
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
V_DS = 10 V
4
3
I_D = 10 mA
2
1 mA
1
0.1 mA
0
−25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS1197EJ0200 Rev.2.00
Mar 26, 2014
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