2SK1629-E1-E_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 500V - 30A - MOS FET High Speed Power Switching

2SK1629-E1-E
500V - 30A - MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 0.22 Ω typ. (at I_D = 15 A, V_GS= 10 V, Ta = 25°C)
• High speed switching
• Low drive current
• Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0003ZC-A
(Package name:TO-264)
G
1
23
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Symbol
V_DSS
V_GSS
I_D
I_{D (pulse)} ^Note1
I_DR
Pch ^Note2
Tch
Tstg
Preliminary Datasheet
R07DS1197EJ0200
Rev.2.00
Mar 26, 2014
D
1. Gate
2. Drain
3. Source
S
Ratings
500
±30
30
120
30
200
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
R07DS1197EJ0200 Rev.2.00
Mar 26, 2014
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