2SC5758 Datasheet, PDF (5/9 Pages) Hitachi Metals, Ltd – Silicon NPN Epitaxial

2SC5758
S₁₁ Parameter vs. Frequency
.8 ¹
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5 10
–10
–.2
–5
–4
–.4
–.6
–.8 _–1
–3
–2
–1.5
Condition: VCE = 1 V , ZO = 50 Ω
100 to 2000 MHz (100 MHz Step)
( IC = 5 mA)
( IC = 20 mA)
S₂₁ Parameter vs. Frequency
90°
Scale: 8 / div.
120°
60°
150°
30°
180°
0°
–150°
–30°
–120°
–90°
–60°
Condition: VCE = 1 V , ZO = 50 Ω
100 to 2000 MHz (100 MHz Step)
(IC = 5 mA)
(IC = 20 mA)
S₁₂ Parameter vs. Frequency
90°
Scale: 0.06 / div.
120°
60°
150°
30°
180°
0°
–150°
–30°
–120°
–90°
–60°
Condition: VCE = 1 V , ZO = 50 Ω
100 to 2000 MHz (100 MHz Step)
(IC = 5 mA)
(IC = 20 mA)
S₂₂ Parameter vs. Frequency
.8 ¹
.6
1.5
2
.4
3
4
.2
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5 10
–10
–.2
–5
–4
–3
–.4
–2
–.6
–.8 _–1
–1.5
Condition: VCE = 1 V , ZO = 50 Ω
100 to 2000 MHz (100 MHz Step)
(IC = 5 mA)
(IC = 20 mA)
Rev.5.00 Aug 10, 2005 page 5 of 8