2SC5758 Datasheet, PDF (3/9 Pages) Hitachi Metals, Ltd – Silicon NPN Epitaxial

2SC5758
Main Characteristics
Collector Power Dissipation Curve
100
80
60
40
20
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
50
V_CE = 1 V
40
30
20
10
0
0.2 0.4 0.6 0.8 1
Base to Emitter Voltage V_BE (V)
Collector Output Capacitance vs.
Collector to Base Voltage
2.0
I_E = 0
f = 1 MHz
1.6
1.2
0.8
0.4
0
0.4 0.8 1.2 1.6 2.0
Collector to Base Voltage V_CB (V)
Rev.5.00 Aug 10, 2005 page 3 of 8
Typical Output Characteristics
50
500 ^µA ₄₅₀ ^µA
400
µ^A
350
µ^A
40
300 ^µA
250 ^µA
30
200 ^µA
20
150 ^µA
100 ^µA
10
I_B = 50 ^µA
0 0.5 1 1.5 2 2.5 3 3.5
Collector to Emitter Voltage V_CE (V)
DC Current Transfer Ratio vs.
Collector Current
200
V_CE = 1 V
100
0
12
5 10 20 50 100
Collector Current I_C (mA)
Gain Bandwidth Product vs.
Collector Current
20
V_CE = 1 V
f =2 GHz
16
12
8
4
0
12
5 10 20 50 100
Collector Current I_C (mA)