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| 2SC5758 Datasheet, PDF (2/9 Pages) Hitachi Metals, Ltd – Silicon NPN Epitaxial | |||
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2SC5758
Electrical Characteristics
Item
Collector to base breakdown voltage
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Noise figure
Symbol
V(BR)CBO
ICBO
ICEO
IEBO
hFE
Cob
fT
PG
NF
Min
10



80
0.65
6
10

Typ




100
0.95
8
13
1.0
Max

600
200
100
130
1.25


2.0
Unit
V
nA
nA
nA
pF
GHz
dB
dB
(Ta = 25°C)
Test conditions
IC = 10 µA, IE = 0
VCB = 10 V, IE = 0
VCE = 3.5 V, RBE = â
VEB = 1.5 V, IC = 0
VCB = 1 V, IC = 5 mA
VCB = 1 V, IE = 0, f = 1 MHz
VCE = 1 V, IC = 5 mA
VCE = 1 V, IC = 5 mA,
f = 900 MHz
VCE = 1 V, IC = 5 mA,
f = 900 MHz
Rev.5.00 Aug 10, 2005 page 2 of 8
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