RJK6025DPE_15 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – 600V - 0.8A - MOS FET High Speed Power Switching

RJK6025DPE
Typical Capacitance vs.
Drain to Source Voltage
1000
V_GS = 0
f = 1 MHz
Ta = 25°C
100
Ciss
10
Coss
1
Crss
0.1
0 50 100 150 200 250 300
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
1.2
V_GS = 0 V
1.0
Ta = 25°C
Pulse Test
0.8
0.6
0.4
0.2
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Preliminary
Dynamic Input Characteristics (Typical)
800
I_D = 0.8 A
Ta = 25°C
V_GS
16
600
V_DS
400
V_DS = 480 V ¹²
300 V
100 V
8
200
0
0
4
V_DS = 480 V
300 V
100 V
0
20 40 60 80 100
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
4
3
I_D = 10 mA
1 mA
0.1 mA
2
1
V_DS = 10 V
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0813EJ0200 Rev.2.00
Jun 21, 2012
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