RJK6025DPE_15 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – 600V - 0.8A - MOS FET High Speed Power Switching

RJK6025DPE
Main Characteristics
Maximum Safe Operation Area
10
1
10 _μs
0.1
0.01
Operation in this
area is limited by
R_DS(on)
Tc = 25°C
1 shot
0.001
0.1
1
10
100
1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
1
V_DS = 10 V
Pulse Test
0.1
Tc = 75°C
0.01
25°C
−25°C
0.001
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
50
V_GS = 10 V
Pulse Test
40
30
I_D = 0.8 A
20
0.2 A
0.4 A
10
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0813EJ0200 Rev.2.00
Jun 21, 2012
Preliminary
Typical Output Characteristics
1.2
Ta = 25°C
Pulse Test
1.0
0.8
5.8 V
6V
8, 10 V
5.6 V
0.6
5.4 V
0.4
5.2 V
5V
0.2
V_GS = 4.8 V
0
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
100
V_GS = 10 V
Ta = 25°C
Pulse Test
10
1
0.01
0.1
1
Drain Current I_D (A)
1000
Body-Drain Diode Reverse
Recovery Time (Typical)
100
10
0.1
di / dt = 100 A / μs
V_GS = 0, Ta = 25°C
1
10
Reverse Drain Current I_DR (A)
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