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| RJK6025DPE_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 600V - 0.8A - MOS FET High Speed Power Switching | |||
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RJK6025DPE
600V - 0.8A - MOS FET
High Speed Power Switching
Features
ï· Low on-resistance
RDS(on) = 13 ï typ. (at ID =0.4 A, VGS = 10 V, Ta = 25ï°C)
ï· Low leakage current
ï· High speed switching
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
G
123
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. Value at Tc = 25ï°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
Pch Note2
ï±ch-c
Tch
Tstg
Preliminary Datasheet
R07DS0813EJ0200
(Previous: REJ03G1870-0100)
Rev.2.00
Jun 21, 2012
D
1. Gate
2. Drain
3. Source
4. Drain
S
Ratings
600
±30
0.8
1.2
0.8
1.2
25
5
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
ï°C/W
ï°C
ï°C
R07DS0813EJ0200 Rev.2.00
Jun 21, 2012
Page 1 of 6
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