RJK0305DPB-02_15 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – 30V, 30A, 8.0mΩmax Silicon N Channel Power MOS FET Power Switching

RJK0305DPB-02
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
I_D = 2 A, 5 A, 10 A
12 _{VGS = 4.5 V}
8
10 V
4
2 A, 5 A, 10 A
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
50
I_D = 30 A
40
20
V_GS
16
V_DD = 25 V
30 _VDS
10 V
12
20
8
10
V_DD = 25 V
4
10 V
0
0
8
0
16 24 32 40
Gate Charge Qg (nc)
Maximum Avalanche Energy vs.
Channel Temperature Derating
20
I_AP = 10 A
16
V_DD = 15 V
duty < 0.1 %
Rg ≥ 50 Ω
12
8
4
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Preliminary
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
Ciss
Coss
100
30 _{VGS = 0}
f = 1 MHz
10
0
10
Crss
20
30
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage
50
10 V
Pulse Test
40
5V
30
20
10
V_GS = 0, –5 V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
R07DS1245EJ0901 Rev.9.01
Jan 07, 2015
Page 4 of 6