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RJK0305DPB-02_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 30V, 30A, 8.0mΩmax Silicon N Channel Power MOS FET Power Switching | |||
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RJK0305DPB-02
30V, 30A, 8.0mâ¦max
Silicon N Channel Power MOS FET
Power Switching
Features
⢠High speed switching
⢠Capable of 4.5 V gate drive
⢠Low drive current
⢠High density mounting
⢠Low on-resistance
RDS(on) = 6.7 mΩ typ. (at VGS = 10 V)
⢠Pb-free
⢠Halogen-free
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
4
G
1 234
Preliminary Datasheet
R07DS1245EJ0901
(Previous: REJ03G1353-0900)
Rev.9.01
Jan 07, 2015
5
D
SSS
123
1, 2, 3 Source
4
Gate
5
Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW ⤠10 μs, duty cycle ⤠1%
2. Value at Tch = 25°C, Rg ⥠50 Ω
3. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-C
Tch
Tstg
Ratings
30
+16/-12
30
120
30
10
10
45
2.78
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
R07DS1245EJ0901 Rev.9.01
Jan 07, 2015
Page 1 of 6
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