RJK0305DPB-02_15 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – 30V, 30A, 8.0mΩmax Silicon N Channel Power MOS FET Power Switching

RJK0305DPB-02
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
50
4.5 V
10 V
40
Pulse Test
3.1 V
30
2.9 V
20
2.7 V
10
V_GS = 2.5 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
Pulse Test
150
100
I_D = 10 A
50
5A
2A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
R07DS1245EJ0901 Rev.9.01
Jan 07, 2015
Preliminary
Maximum Safe Operation Area
1000
10 μs
100
10
1 ms
Operation in
1
DS(on)
Tc = 25°C
0.1 ^{1 shot Pulse}
0.1
1
10
100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
20
10
Tc = 75°C
25°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
30
10
V_GS = 4.5 V
10 V
3
1
1 3 10 30 100 300 1000
Drain Current I_D (A)
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