RJK0304DPB Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

RJK0304DPB
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
12
I_D = 2 A, 5 A, 10 A
8
V_GS = 4.5 V
4
10 V
2 A, 5 A, 10 A
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
50
I_D = 35 A
20
V_GS
40
16
V_DD = 25 V
10 V
30 _VDS
12
20
8
10
V_DD = 25 V
4
10 V
0
0
0
20 40 60 80 100
Gate Charge Qg (nc)
Maximum Avalanche Energy vs.
Channel Temperature Derating
40
I_AP = 14 A
32
V_DD = 15 V
duty < 0.1 %
Rg ≥ 50 Ω
24
16
8
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
Ciss
1000
300
100
Coss
Crss
30 _{VGS = 0}
f = 1 MHz
10
0
10
20
30
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage
50
10 V
40
5V
Pulse Test
30
20
10
V_GS = 0, –5 V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Rev.6.00 Apr 19, 2006 page 4 of 6