RJK0304DPB Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

RJK0304DPB
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS
30
Gate to source leak current
I_GSS
—
Zero gate voltage drain current
I_DSS
—
Gate to source cutoff voltage
V_GS(off)
1.2
Static drain to source on state
resistance
R_DS(on)
—
R_DS(on)
—
Forward transfer admittance
|y_fs|
—
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Gate Resistance
Rg
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage
V_DF
—
Body–drain diode reverse recovery
t_rr
—
time
Notes: 4. Pulse test
Typ
—
—
—
—
4.0
5.5
60
2500
850
130
0.5
17
6.7
3.7
8.5
3.2
41
4.0
0.84
35
Max
—
± 0.1
1
2.5
4.8
7.2
—
—
—
—
—
—
—
—
—
—
—
—
1.10
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
I_D = 10 mA, V_GS = 0
V_GS = +16/–12 V, V_DS = 0
V_DS = 30 V, V_GS = 0
V_DS = 10 V, I_D = 1 mA
I_D = 17.5 A, V_GS = 10 V ^Note4
I_D = 17.5 A, V_GS = 4.5 V
Note4
I_D = 17.5 A, V_DS = 10 V ^Note4
V_DS = 10 V, V_GS = 0,
f = 1 MHz
V_DD = 10 V, V_GS = 4.5 V,
I_D = 35 A
V_GS = 10 V, I_D = 17.5 A,
V_DD ≅ 10 V,R_L = 0.57 Ω,
Rg = 4.7 Ω
IF = 35 A, V_GS = 0 ^Note4
IF = 35 A, V_GS = 0
di_F/ dt = 100 A/ µs
Rev.6.00 Apr 19, 2006 page 2 of 6