RJK0304DPB Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

RJK0304DPB
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
50
4.5 V
10 V
40
Pulse Test
2.8 V
30
2.6 V
20
V_GS = 2.4 V
10
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
80
Pulse Test
60
40
I_D = 10 A
20
5A
2A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.6.00 Apr 19, 2006 page 3 of 6
Maximum Safe Operation Area
1000
100
µ_s
10
1 _{limited by RDS(on)}
Tc = 25°C
0.1 ^{1 shot Pulse}
0.1
1
10
100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
20
10
Tc = 75°C
25°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
30
10
V_GS = 4.5 V
3
10 V
1
1 3 10 30 100 300 1000
Drain Current I_D (A)