RJK0301DPB-02_15 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – 30V, 60A, 2.8mΩ max. Silicon N Channel Power MOS FET Power Switching

RJK0301DPB-02
Static Drain to Source on State Resistance
vs. Temperature
10
Pulse Test
8
6
I_D = 5 A, 10 A, 20 A
4
V_GS = 4.5 V
2
10 V
5 A, 10 A, 20 A
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
50
I_D = 60 A
40 ^{VDD = 25 V}
10 V
20
V_GS
16
30
12
V_DS
20
8
10
V_DD = 25 V
4
10 V
0
0
0
40 80 120 160 200
Gate Charge Qg (nc)
Maximum Avalanche Energy vs.
Channel Temperature Derating
100
I_AP = 30 A
80
V_DD = 15 V
duty < 0.1 %
Rg ≥ 50 Ω
60
40
20
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Preliminary
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
Ciss
1000
300
Coss
100
Crss
30 _{VGS = 0}
f = 1 MHz
10
0
10
20
30
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage
100
10 V
80
5V
Pulse Test
60
40
20
V_GS = 0, –5V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
R07DS1244EJ0901 Rev.9.01
Jan 07, 2015
Page 4 of 6