RJK0301DPB-02_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 30V, 60A, 2.8mΩ max. Silicon N Channel Power MOS FET Power Switching

RJK0301DPB-02
30V, 60A, 2.8mΩ max.
Silicon N Channel Power MOS FET
Power Switching
Features
• High speed switching
• Capable of 4.5V gate drive
• Low drive current
• High density mounting
• Low on-resistance
R_DS(on) = 2.3 mΩ typ. (at VGS = 10 V)
• Pb-free
• Halogen-free
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
4
G
1 ²³⁴
Preliminary Datasheet
R07DS1244EJ0901
(Previous: REJ03G1338-0900)
Rev.9.01
Jan 07, 2015
5
D
SSS
123
1, 2, 3
4
5
Source
Gate
Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP ^{Note 2}
EAR ^{Note 2}
Pch ^Note3
θch-C
Tch
Tstg
Ratings
30
+16/ –12
60
240
60
30
90
65
1.93
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
R07DS1244EJ0901 Rev.9.01
Jan 07, 2015
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