RJK0301DPB-02_15 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – 30V, 60A, 2.8mΩ max. Silicon N Channel Power MOS FET Power Switching

RJK0301DPB-02
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
100
4.5 V
80
10 V
3.1 V
2.9 V
60
40
2.7 V
20
V_GS = 2.5 V
Pulse Test
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
Pulse Test
150
100
50
I_D = 20 A
10 A
5A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
R07DS1244EJ0901 Rev.9.01
Jan 07, 2015
Preliminary
Maximum Safe Operation Area
1000
100
1 ms
1001_μ^0sμs
10
PW = 10 ms
Operation in
this area is
1 _{limited by RDS(on)}
Tc = 25°C
0.1 ^{1 shot Pulse}
0.1
1
10
100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
100
V_DS = 10 V
Pulse Test
80
60
40
20
Tc = 75°C
25°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
30
10
V_GS = 4.5 V
3
10 V
1
1 3 10 30 100 300 1000
Drain Current I_D (A)
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