RJK0234DNS Datasheet, PDF (4/7 Pages) Renesas Technology Corp – 25V, 35A, 5.8mΩmax. N Channel Power MOS FET High Speed Power Switching

RJK0234DNS
Static Drain to Source On State Resistance
vs. Temperature
10
Pulse Test
8
I_D = 2 A, 5 A, 10A
6 ^VGS ^{= 4.5 V}
4
8V
2 A, 5 A, 10A
2
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
50
I_D = 35 A
40
10
V_GS
8
30
V_DD = 20 V
10 V
6
V_DS
20
4
10
V_DD = 20 V
2
10 V
0
0
0
3
6
9
12 15
Gate Charge Qg (nc)
Maximum Avalanche Energy vs.
Channel Temperature Derating
100
I_AP = 21 A
V_DD = 15 V
80
duty < 0.1%
Rg ≥ 50 Ω
60
40
20
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
V_GS = 0
f = 1 MHz
Ciss
1000
Coss
300
100
Crss
30
10
0
10
20 25
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage
50
8V
5V
40
Pulse Test
30
20
10
V_GS = 0, –5 V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
R07DS1073EJ0130 Rev.1.30
May 23, 2013
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