RJK0234DNS Datasheet, PDF (2/7 Pages) Renesas Technology Corp – 25V, 35A, 5.8mΩmax. N Channel Power MOS FET High Speed Power Switching

RJK0234DNS
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS
25
Gate to source leak current
I_GSS
—
Zero gate voltage drain current
I_DSS
—
Gate to source cutoff voltage
V_GS(off)
0.9
Static drain to source on state
R_DS(on)
—
resistance
R_DS(on)
—
Forward transfer admittance
|y_fs|
—
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Gate Resistance
Rg
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage
V_DF
—
Body–drain diode reverse recovery
t_rr
—
time
Notes: 4. Pulse test
Typ
—
—
—
—
4.8
5.4
80
1050
880
66
0.6
7.3
1.9
1.4
2.8
1.9
13.6
3.3
0.84
10.5
Max
—
±0.1
1
1.4
5.8
6.8
—
1470
—
—
1.6
—
—
—
—
—
—
—
1.09
—
Preliminary
Unit
V
μA
μA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
I_D = 10 mA, V_GS = 0
V_GS = +10/-8 V, V_DS = 0
V_DS = 20 V, V_GS = 0
V_DS = 10 V, I _D = 1 mA
I_D = 17.5 A, V_GS = 8 V ^Note4
I_D = 17.5 A, V_GS = 4.5 V ^Note4
I_D = 17.5 A, V_DS = 5 V ^Note4
V_DS = 10 V
V_GS = 0
f = 1 MHz
V_DD = 10 V
V_GS = 4.5 V
I_D = 35 A
V_GS = 8 V, I_D = 17.5 A
V_DD ≅ 10 V
R_L = 0.57 Ω
Rg = 4.7 Ω
I_F = 35 A, V_GS = 0 ^Note4
I_F =35 A, V_GS = 0
di_F/ dt = 500 A/ μs
R07DS1073EJ0130 Rev.1.30
May 23, 2013
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