RJK0234DNS Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 25V, 35A, 5.8mΩmax. N Channel Power MOS FET High Speed Power Switching

RJK0234DNS
25V, 35A, 5.8mΩmax.
N Channel Power MOS FET
High Speed Power Switching
Features
• Very high speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
• Pb-free
• Halogen-free
Outline
RENESAS Package code: PVSN0008JD-A
(Package name: 8pin HVSON(3333))
5 6 78
4
4 321
G
Preliminary Datasheet
R07DS1073EJ0130
Rev.1.30
May 23, 2013
5 678
D DDD
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
Symbol
V_DSS
V_GSS
I_D
I_{D(pulse)Note1}
I_DR
I_AP ^{Note 2}
E_AS ^{Note 2}
Pch ^Note3
θch-c ^Note3
Tch
Tstg
Ratings
25
+10,-8
35
140
35
21
55
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
R07DS1073EJ0130 Rev.1.30
May 23, 2013
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