RJH60F7ADPK Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH60F7ADPK
Forward Current vs. Forward Voltage (Typical)
100
V_GE = 0 V
Pulse Test
80 _{Ta = 25°C}
60
40
20
0
0
1
2
3
4
5
C-E Diode Forward Voltage V_CEF (V)
Dynamic Input Characteristics (Typical)
800
I_C = 50 A
Ta = 25°C
V_CE
600
400
V_GE
16
12
V_CE = 600 V
300 V
8
200
0
0
4
V_CE = 600 V
300 V
0
40 80 120 160 200
Gate Charge Qg (nc)
Switching Characteristics (Typical) (2)
10000
I_C = 50 A, R_L = 6 Ω
V_GE = 15 V, Ta = 25°C
1000
td(off)
100
td(on) _{tr tf}
10
1
10
100
Gate Resistance Rg (Ω)
Preliminary
Typical Capacitance vs.
Collector to Emitter Voltage (Typical)
10000
Cies
1000
100
Coes
V_GE = 0 V
f = 1 MHz
Cres
10 ^{Ta = 25°C}
0 50 100 150 200 250 300
Collector to Emitter Voltage V_CE (V)
Switching Characteristics (Typical) (1)
1000
V_CC = 300 V, V_GE = 15 V
Rg = 5 Ω, Ta = 25°C
td(off)
100
td(on)
tf
tr
10
1
1
10
100
1000
Collector Current I_C (A)
Switching Characteristics (Typical) (3)
1000
I_C = 50 A, R_L = 6 Ω
V_GE = 15 V
td(off)
100
tr ^tf
td(on)
10
0 20 40 60 80 100 120 140
Case Temperature Tc (°C)
REJ03G1837-0100 Rev.1.00 Oct 13, 2009
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