RJH60F7ADPK Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH60F7ADPK
Main Characteristics
Maximum Safe Operation Area
1000
100
PW
= _{10 μs}
10
1
Tc = 25°C
Single pulse
0.1
1
10
100
1000
Collector to Emitter Voltage V_CE (V)
Typical Transfer Characteristics
160
PVu_Cl_Ese=T1e0stV
TPau=lse25T°_eCst
120
80
Tc = 75°C
40
25°C
–25°C
0
0
2
4
6
8
10
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
2.0
I_C = 90 A
1.6
50 A
1.2
20 A
0.8
0.4
V_GE = 15 V
Pulse Test
0
−25 0 25 50
75 100 125 150
Junction Temparature Tj (°C)
REJ03G1837-0100 Rev.1.00 Oct 13, 2009
Page 3 of 6
Preliminary
Typical Output Characteristics
Pulse Test
160 _{Ta = 25°C}
10 V
120
15 V
8.4 V
8.6 V
9V
8V
80
7.6 V
40
V_GE = 7 V
0
0
1
2
3
4
5
Collector to Emitter Voltage V_CE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
3.0
Pulse Test
2.5
Ta = 25°C
2.0
1.5
1.0
I_C = 20 A ^{50 A 90 A}
0.5
0
0
4
8
12 16 20
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
7
6
I_C = 10 mA
5
4
1 mA
3
2
1 _{VCE = 10 V}
Pulse Test
0
−25 0 25 50
75 100 125 150
Junction Temparature Tj (°C)