RJH60F7ADPK Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH60F7ADPK
Silicon N Channel IGBT
High Speed Power Switching
Features
• High speed switching
• Low on-state voltage
• Fast recovery diode
Outline
Preliminary
REJ03G1837-0100
Rev.1.00
Oct 13, 2009
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
4
12 ₃
1. Gate
2. Collector
G
3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW ≤ 5 μs, duty cycle ≤ 1%
Symbol
V_CES
V_GES
I_C
I_C
ic(peak) ^Note1
i_DF(peak) ^Note2
P_C
θj-c
θj-c
Tj
Tstg
Ratings
600
±30
90
50
180
100
328.9
0.38
2.0
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
REJ03G1837-0100 Rev.1.00 Oct 13, 2009
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