RJH60F4DPK Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH60F4DPK
Collector to Emitter Diode Forward Voltage vs.
Diode Forward Current Characteristics (Typical)
100
V_GE = 0 V
Pulse Test
80
60
40
20
0
0
1
2
3
4
5
Collector to Emitter Diode
Forward Voltage V_ECF (V)
Dynamic Input Characteristics (Typical)
800
16
V_GE
600 ^VCE
V_CE = 600 V
12
300 V
400
8
200
0
0
4
V_CE = 600 V
300 V
I_C = 30 A ₀
20 40 60 80 100
Gate Charge Qg (nC)
Switching Characteristics (Typical) (2)
1000
I_C = 30 A, R_L = 10 Ω
V_GE = 15 A, Ta = 25°C
100 tf
td(off)
tr
td(on)
10
1
10
100
Gate Resistance Rg (Ω)
10000
1000
Preliminary
Typical Capacitance vs.
Colloctor to Emitter Voltage
Cies
100
Coes
Cres
10
V_GE = 0 V
f = 1 MHz
Ta = 25°C
1
0 50 100 150 200 250 300
Colloctor to Emitter Voltage V_CE (V)
Switching Characteristics (Typical) (1)
1000
V_CC = 300 V, V_GE = 15 V
Rg = 5 Ω, Ta = 25°C
100 ^tf
td(off)
td(on)
10
tr
1
1
10
100
1000
Colloctor Current I_C (A)
Switching Characteristics (Typical) (3)
1000
I_C = 30 A, V_GE = 15 A
R_L = 10 Ω, Rg = 5 Ω
100
tf
td(off)
tr
td(on)
10
0 20 40 60 80 100 120 140
Case Temperature Tc (°C)
REJ03G1835-0100 Rev.1.00 Oct 13, 2009
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