RJH60F4DPK Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH60F4DPK
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
I_CES
⎯
Gate to emitter leak current
I_GES
⎯
Gate to emitter cutoff voltage
V_GE(off)
4
Collector to emitter saturation voltage V_CE(sat)
⎯
V_CE(sat)
⎯
Input capacitance
Cies
⎯
Output capacitance
Coes
⎯
Reverse transfer capacitance
Cres
⎯
Switching time
t_d(on)
⎯
t_r
⎯
t_d(off)
⎯
t_f
⎯
C-E diode forward voltage
V_ECF1
⎯
V_ECF2
⎯
C-E diode reverse recovery time
t_rr
⎯
Notes: 3. Pulse test
Typ
⎯
⎯
⎯
1.4
1.7
1945
93
33
30
32
65
80
1.6
1.8
140
Preliminary
Max
100
±1
8
1.82
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2.1
⎯
⎯
Unit
μA
μA
V
V
V
pF
pF
pF
ns
ns
ns
ns
V
V
ns
(Tj = 25°C)
Test Conditions
V_CE = 600V, V_GE = 0
V_GE = ±30 V, V_CE = 0
V_CE = 10V, I_C = 1 mA
I_C = 30 A, V_GE = 15V ^Note3
I_C = 60 A, V_GE = 15V ^Note3
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
I_C = 30 A, Resistive Load
V_CC = 300V
V_GE = 15V
Rg = 5 Ω ^Note3
I_F = 20 A ^Note3
I_F = 40 A ^Note3
I_F = 20 A
di_F/dt = 100 A/μs
REJ03G1835-0100 Rev.1.00 Oct 13, 2009
Page 2 of 6