RJH60F4DPK Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH60F4DPK
Main Characteristics
Maximum Safe Operation Area
1000
100
10 _μs
10
1
0.1
Ta = 25°C
1 shot pulse
0.01
1
10
100
1000
Collector to Emitter Voltage V_CE (V)
Typical Transfer Characteristics
120
V_CE = 10 V
100 ^{Pulse Test}
80
60
Tc = 75°C
40
25°C
20
–25°C
0
0
2
4
6
8
10
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
2.4
V_GE = 15 V
2.0 ^{Pulse Test}
I_C = 60 A
1.6
30 A
15 A
1.2
0.8
0.4
0
−25 0 25 50 75 100 125 150
Junction Temparature Tj (°C)
REJ03G1835-0100 Rev.1.00 Oct 13, 2009
Page 3 of 6
Preliminary
Typical Output Characteristics
120
Ta = 25°C
Pulse Test
100
11 V
10 V
12 V
80
15 V
9.5 V
60
9V
40
8.5 V
20
V_GE = 8 V
0
0
1
2
3
4
5
Collector to Emitter Voltage V_CE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
3.0
Ta = 25°C
Pulse Test
2.4
30 A 60 A
1.8
1.2
0.6
I_C = 15 A
0
0
4
8
12 16 20
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temperature (Typical)
8
V_CE = 10 V
7
6
5
I_C = 10 mA _{1 mA}
4
3
2
1
0
-25 0 25 50 75 100 125 150
Junction Temperature Tj (°C)