RJF0611JPE_12 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Series Power Switching

RJF0611JPE
Static Drain to Source on State Resistance
vs. Temperature
55
Pulse Test
50
45
40
35
30 ^VGS ^{= 4 V}
25
20
I_D = 15 A
10 A
5A
10 A
5A
I_D = 15 A
15
10 V
10
–50 –25 0
25 50
75 100 125 150
Case Temperature Tc (°C)
1000
Body-Drain Diode Reverse
Recovery Time
100
10
di / dt = 50 A / μs
V_GS = 0, Ta = 25°C
1
0.1
1
10
100
Reverse Drain Current I_DR (A)
Reverse Drain Current vs.
Source to Drain Voltage
30
Pulse Test
25
20
15
V_GS = 5 V
10
5
0V
0
0 0.2 0.4 0.6 0.8 1.0
Source to Drain Voltage V_SD (V)
Target Specifications
Forward Transfer Admittance vs.
Drain Current
100
V_DS = 10 V
Pulse Test
Tc = –40°C
25°C
10
1
150°C
0.1
0.1
1
10
100
Drain Current I_D (A)
Switching Characteristics
100
V_GS = 10 V, V_DD = 30 V
PW = 300 μs, duty ≤ 1 %
10
1
0.1
tr
tf
td(off)
td(on)
1
10
100
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
Coss
100
30
V_GS = 0
f = 1 MHz
10
0 10 20 30 40 50 60
Drain to Source Voltage V_DS (V)
R07DS0582EJ0200 Rev.2.00
Apr 13, 2012
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