RJF0611JPE_12 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Series Power Switching

RJF0611JPE
Main Characteristics
Power vs. Temperature Derating
60
50
40
30
20
10
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V
9V
40
8V
7V
4V
30
20
V_GS = 3 V
10
Pulse Test
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
800
Pulse Test
700
600
500
400
I_D = 15 A
300
10 A
200
5A
100
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
R07DS0582EJ0200 Rev.2.00
Apr 13, 2012
Target Specifications
Maximum Safe Operation Area
100
Thermal shut down
Operation area
10
DC Operation
(Tc = 25°C)
1 ms
1
PW = 10 ms
Operation in
this area is
limited by R_{DS (on)}
0.1
0.01
0.1
1
10
100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
30
V_DS = 10 V
Pulse Test
20
Tc = –40°C
25°C
10
0
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
Pulse Test
100
V_GS = 4 V
10 V
10
1
0.1
1
10
100
Drain Current I_D (A)
Page 3 of 7