RJF0611JPE_12 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Series Power Switching

Target Specifications Datasheet
RJF0611JPE
Silicon N Channel MOS FET Series
Power Switching
R07DS0582EJ0200
Rev.2.00
Apr 13, 2012
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
 Logic level operation (4 V Gate drive).
 Built-in the over temperature shut-down circuit.
 High endurance capability against to the short circuit.
 Latch type shut down operation (need 0 voltage recovery).
 Built-in the current limitation circuit.
 Power supply voltage applies 12 V and 24 V.
 AEC-Q101 Compliant
Outline
RENESAS Package code: PRSS0004AE-B
D
(Package name: LDPAK (S)-(1) )
4
G
123
Gate Resistor
Temperature
Sensing
Circuit
Latch
Circuit
Current
Limitation
Circuit
Gate
Shut-down
Circuit
1. Gate
2. Drain
3. Source
4. Drain
S
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
V_DSS
V_GSS
V_GSS
I_D ^Note3
I_DR
I_AP ^{Note 2}
E_AR ^{Note 2}
Pch ^{Note 1}
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Value at Tc = 25C
2. Tch = 25C, Rg  50 
3. It provides by the current limitation lower bound value.
Ratings
60
16
–2.5
30
30
6.7
192
50
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
C
C
R07DS0582EJ0200 Rev.2.00
Apr 13, 2012
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