RJE0616JSP_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – -60V, -4A Silicon P Channel Thermal FET Power Switching

RJE0616JSP
Static Drain to Source On State Resistance
vs. Temperature
200
Pulse Test
150
I_D = −2 A
−1 A
−0.5 A
100 ^VGS ^{= −6 V}
I_D = −0.5 A, −1 A, −2 A
50 _{VGS = −10 V}
0
−50 −25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Switching Characteristics
10
tr
td(off)
1
td(on)
tf
0.1
V_GS = −10 V, V_DD = −30 V
PW = 300 μs, duty ≤ 1 %
0.01
−0.1
−1
−10
Drain Current I_D (A)
1000
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
100
10
0 −10 −20 −30 −40 −50 −60
Drain to Source Voltage V_DS (V)
Preliminary
1000
Body-Drain Diode Reverse
Recovery Time
100
10
−0.1
di / dt = 50 A / μs
V_GS = 0, Ta = 25°C
−1
−10
Reverse Drain Current I_DR (A)
Reverse Drain Current vs.
Source to Drain Voltage
−4
V_GS = −5 V
−3
−2
V_GS = 0 V, 5 V, 10 V
−1
Pulse Test
0
−0.4 −0.8 −1.2 −1.6 −2.0
Source to Drain Voltage V_SD (V)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
−16
−14
−12
−10
−8
−6
V_DD = −16 V
−4
−2
0
1
10
100
Shutdown Time of Load-Short Test PW (ms)
REJ03G1944-0100 Rev.1.00
Jul 01, 2010
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