RJE0616JSP_15 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – -60V, -4A Silicon P Channel Thermal FET Power Switching

Preliminary Datasheet
RJE0616JSP
Silicon P Channel MOS FET Series
Power Switching
REJ03G1944-0100
Rev.1.00
Jul 01, 2010
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
 For Automotive applications
 Built-in the over temperature shut-down circuit.
 High endurance capability against to the short circuit.
 Latch type shut down operation (need 0 voltage recovery).
 Built-in the current limitation circuit.
 Low on-resistance R_DS(on) : 77 m Typ, 90 m Max (V_GS = –10 V)
 High density mounting
 AEC-Q101 compliant
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8)
8 ^{7 65}
1 ²³⁴
4
G
Gate Resistor
Current
Limitation
Circuit
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
DDDD
5678
1, 2, 3
4
5, 6, 7, 8
Source
Gate
Drain
123
SSS
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
Drain current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
V_DSS
V_GSS
V_GSS
I_D ^Note3
I_DR
I_AP ^{Note 2}
E_AR ^{Note 2}
Pch ^{Note 1}
–60
–16
2.5
–4
–4
–4
68.6
2.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1 When using the glass epoxy board (FR4 40  40  1.6 mm), PW  10 s
2. Tch = 25C, Rg  50 
3. It provides by the current limitation lower bound value.
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
C
C
REJ03G1944-0100 Rev.1.00
Jul 01, 2010
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