R1EV58064BXXN Datasheet, PDF (4/25 Pages) Renesas Technology Corp – 64K EEPROM (8-Kword × 8-bit)

R1EV58064BxxN Series/R1EV58064BxxR Series
Operation Table
Operation
CE
OE
WE
RES*³
Read
Standby
V_IL
V_IL
V_IH
V_H*¹
V_IH
*²


Write
V_IL
V_IH
V_IL
V_H
Deselect
V_IL
V_IH
V_IH
V_H
Write Inhibit


V_IH

Write Inhibit
Data Polling

V_IL


V_IL
V_IL
V_IH
V_H
Program reset



V_IL
Notes: 1. Refer to the recommended DC operating conditions.
2.  : Don’t care
3. This function supported by only the R1EV58064BxxR series.
RDY/Busy
High-Z
High-Z
High-Z to V_OL
High-Z


V_OL
High-Z
I/O
Dout
High-Z
Din
High-Z


Dout (I/O7)
High-Z
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Power supply voltage relative to V_SS
V_CC
–0.6 to +7.0
V
Input voltage relative to V_SS
Vin
–0.5*¹ to +7.0*³
V
Operating temperature range *²
Topr
–40 to +85
C
Storage temperature range
Tstg
–55 to +125
C
Notes: 1. Vin min : –3.0 V for pulse width  50 ns.
2. Including electrical characteristics and data retention.
3. Should not exceed V_CC + 1 V.
Recommended DC Operating Conditions
Parameter
Symbol
Min
Typ
Max
Supply voltage
Input voltage*⁶
Operating temperature
V_CC
V_SS
V_IL
V_IH
V_H*⁴
Topr
2.7
0
–0.3*¹
2.4*²
V_CC – 0.5
–40
—
5.5
0
0
—
0.6*⁵
—
V_CC + 0.3*³
—
V_CC + 1.0
—
+85
Notes: 1. V_IL min: –1.0 V for pulse width  50 ns.
2. V_IH = 3.0 V for V_CC = 3.6 to 5.5 V.
3. V_IH max: V_CC + 1.0 V for pulse width  50 ns.
4. This function is supported by only the R1EV58064BxxR series.
5. V_IL = 0.8 V for V_CC = 3.6 V to 5.5 V
6. Refer to the recommended AC operating condition during read and write operation.
Unit
V
V
V
V
V
C
R10DS0207EJ0200 Rev.2.00
May 12, 2016
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