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R1EV58064BXXN Datasheet, PDF (1/25 Pages) Renesas Technology Corp – 64K EEPROM (8-Kword × 8-bit)
R1EV58064BxxN Series
R1EV58064BxxR Series
64K EEPROM (8-Kword × 8-bit)
Ready/Busy function
RES function (R1EV58064BxxR)
Data Sheet
R10DS0207EJ0200
Rev.2.00
May 12, 2016
Description
Renesas Electronics’ R1EV58064BxxN series and R1EV58064BxxR series are electrically erasable and programmable
EEPROM’s organized as 8192-word  8-bit. They have realized high speed, low power consumption and high
reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They
also have a 64-byte page programming function to make their write operations faster.
Features
 Single supply: 2.7 to 5.5 V
 Access time:
 100 ns (max) at 2.7 V  VCC < 4.5 V
 70 ns (max) at 4.5 V  VCC  5.5 V
 Power dissipation:
 Active: 20 mW/MHz (typ)
 Standby: 110 W (max)
 On-chip latches: address, data, CE, OE, WE
 Automatic byte write: 10 ms (max)
 Automatic page write (64 bytes): 10 ms (max)
 Ready/Busy
 Data polling and Toggle bit
 Data protection circuit on power on/off
 Conforms to JEDEC byte-wide standard
 Reliable CMOS with MONOS cell technology
 105 or more erase /write cycles
 10 or more years data retention
 Software data protection
 Write protection by RES pin (only the R1EV58064BxxR series)
 Temperature range: 40 to +85C
 There are lead free products.
R10DS0207EJ0200 Rev.2.00
May 12, 2016
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