R10DS0206EJ0100 Datasheet, PDF (4/12 Pages) Renesas Technology Corp – 4Mb Advanced LPSRAM

RMLV0408E Series
DC Operating Conditions
Parameter
Symbol
Min.
Supply voltage
V_CC
2.7
V_SS
0
Input high voltage
V_IH
2.2
Input low voltage
V_IL
-0.3
Ambient temperature range
Ta
-40
Note 4. -3.0V for pulse ≤ 30ns (full width at half maximum)
Typ.
Max.
Unit
Note
3.0
3.6
V
0
0
V
─
V_CC+0.3
V
─
0.6
V
4
─
+85
°C
DC Characteristics
Parameter
Input leakage current
Output leakage current
Symbol
| I_LI |
| I_LO |
Min.
─
─
Operating current
I_CC
─
Average operating current
─
I_CC1
─
Standby current
Standby current
I_CC2
─
I_SB
─
─
Typ.
─
─
─
─
─
─
0.1^*5
0.4^*5
Max.
1
1
10
20
25
2.5
0.3
2
Unit
Test conditions
A Vin = V_SS to V_CC
A
CS# = V_IH or OE# =V_IH or WE#= V_IL,
VI/O = V_SS to V_CC
mA
CS# =V_IL,
Others = V_IH/V_IL, II/O = 0mA
mA
Cycle = 55ns, duty = 100%, II/O = 0mA,
CS# = V_IL, Others = V_IH/V_IL
mA
Cycle = 45ns, duty = 100%, II/O = 0mA,
CS# = V_IL, Others = V_IH/V_IL
mA
Cycle = 1s, duty = 100%, II/O = 0mA,
CS# ≤ 0.2V, V_IH ≥ Vcc-0.2V, V_IL ≤ 0.2V
mA
CS# =V_IH,
Others = V_SS to V_CC
A ~+25°C
─
─
3
A ~+40°C
I_SB1
─
─
Vin = V_SS to V_CC,
5
A ~+70°C ^{CS# ≥ VCC-0.2V}
─
─
7
A ~+85°C
Output high voltage
V_OH
2.4
─
─
V I_OH = -1mA
Output low voltage
V_OH2
V_CC-0.2
─
V_OL
─
─
─
V I_OH = -0.1mA
0.4
V I_OL = 2.1mA
V_OL2
─
─
0.2
V I_OL = 0.1mA
Note 5. Typical parameter indicates the value for the center of distribution at 3.0V (Ta=25ºC), and not 100% tested.
Capacitance
(Vcc = 2.7V ~ 3.6V, f = 1MHz, Ta = -40 ~ +85°C)
Parameter
Symbol Min. Typ. Max. Unit Test conditions
Note
Input capacitance
C in
─
─
8
pF
Vin =0V
6
Input / output capacitance
C _I/O
─
─
10
pF
V_I/O =0V
6
Note 6. This parameter is sampled and not 100% tested.
R10DS0206EJ0100 Rev.1.00
2014.2.27
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