NP36N10SDE Datasheet, PDF (4/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP36N10SDE
90
80
70
60
50
40
30
20
10
0
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
VGS = 10 V
4.5 V
1
2
3
4
5
V_DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
3
V_DS = V_GS
I_D = 250 μA
2
1
0
-100 -50 0 50 100 150 200
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
70
P u lse d
60
50
40
V GS = 4.5V
30
10 V
20
10
0
0 .1
1
10
100
I_D - Drain Current - A
R07DS0508EJ0100 Rev.1.00
Sep 21, 2011
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
1000
100
10
1
0.1
T_A = −55°C
−25°C
25°C
75°C
125°C
150°C
175°C
0.01
0.001
0
1
2
V_DS = 10 V
Pulsed
3
4
5
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
100
TA = −55°C
−25°C
25°C
75°C
10
1
0.1
1
125°C
150°C
175°C
VDS = 10 V
Pulsed
10
100
I_D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
50
Pulsed
45
40
ID = 36 A
35
18 A
30
25
20
7.2 A
15
10
5
0
0 2 4 6 8 10 12 14 16 18 20
V_GS - Gate to Source Voltage - V
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