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NP36N10SDE Datasheet, PDF (1/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR | |||
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NP36N10SDE
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0508EJ0100
Rev.1.00
Sep 21, 2011
Description
The NP36N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
⢠Low on-state resistance
RDS(on)1 = 33 mΩ MAX. (VGS = 10 V, ID = 18 A)
RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 18 A)
⢠Low Ciss: Ciss = 3500 pF TYP. (VDS = 25 V)
⢠Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
Lead Plating
Packing
NP36N10SDE-E1-AY â1
Pure Sn (Tin)
Tape 2500 p/reel Taping (E1 type)
NP36N10SDE-E2-AY â1
Taping (E2 type)
Note: â1. Pb-free (This product does not contain Pb in the external electrode.)
Package
TO-252 (MP-3ZK)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) â1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) â2
Channel Temperature
Storage Temperature
Single Avalanche Current â3
Single Avalanche Energy â3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
100
±20
±36
±100
142
1.2
175
â55 to +175
31
99
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance â2
Rth(ch-C)
Rth(ch-A)
1.06
125
°C/W
°C/W
Notes: â1. TC = 25°C, PW ⤠10 μs, Duty Cycle ⤠1%
â2. Mounted on glass epoxy substrate of 40 mm à 40 mm à 1.6 mm with 4% Copper area (35 μm)
â3. Tch(start) = 25°C, VDD = 50 V, RG = 25 Ω, L = 100 μH, VGS = 20 V â 0 V
R07DS0508EJ0100 Rev.1.00
Sep 21, 2011
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