NP36N10SDE Datasheet, PDF (3/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP36N10SDE
Typical Characteristics (T_A = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
Chapter Title
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
160
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
1000
100
10
RDS(ON) Limited
(VGS = 10 V)
ID(DC) = 36 A
PW = 100 µs
1 ms
Power Dissipation Limited
Secondary Brakedown Limited
1
TC = 25°C
Single Pulse
0.1
0.1
1
DC
10
100
V_DS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 125°C/W
10
Rth(ch-C) = 1.06°C/W
1
Single pulse
0.1
Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mm
with 4% Copper area (35 μm)
0.01
100 μ
1m
10 m 100 m
1
10
100
PW - Pulse Width - s
1000
R07DS0508EJ0100 Rev.1.00
Sep 21, 2011
Page 3 of 6