HRB0103B Datasheet, PDF (4/6 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying

HRB0103B
Two device total
120
100
DC
80
D=1/6
60
D=1/3
20hx15wx0.8t
40
1.5
20
sin wave
1.5
Unit: mm
D=1/2
0
0 25 50 75 100 125 150
Io
0
tp
T
D = ^tp
T
VR = 30V
Ambient temperature Ta (°C)
Fig.5 Average rectified current vs. Ambient temperature
Rev.2.00 May 10, 2005 page 4 of 5