HRB0103B Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying

HRB0103B
Absolute Maximum Ratings *¹
Item
Repetitive peak reverse voltage
Average rectified current
Non-Repetitive peak forward surge current
Junction temperature
Storage temperature
Notes: 1. Per one device.
2. See Fig.5, Two device total.
3. 10 ms sine wave 1 pulse.
Symbol
VRRM
IO*²
IFSM *³
Tj
Tstg
Value
30
100
3
125
−55 to +125
(Ta = 25°C)
Unit
V
mA
A
°C
°C
Electrical Characteristics
Item
Forward voltage
Reverse current
(Ta = 25°C)
Symbol Min
Typ
Max
Unit
Test Condition
VF
—
—
0.44
V
IF = 100 mA
IR
—
—
50
µA VR = 30 V
Rev.2.00 May 10, 2005 page 2 of 5