HRB0103B Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying

HRB0103B
Main Characteristic
10^–2
10^–3
Pulse test
10^–4
10^–5
10^–6
10^–7
10^–8
10^–9
0
0.1 0.2 0.3 0.4 0.5
Forward voltage V_F (V)
Fig.1 Forward current vs. Forward voltage
10^–2
10^–3
Pulse test
10^–4
10^–5
10^–6
10^–7
0
10 20 30 40 50
Reverse voltage V_R (V)
Fig.2 Reverse current vs. Reverse voltage
0.08
0.07
20h×15w×0.8t
D=1/6
0.06
0.05
0.04
1.5 _{Unit: mm}
sin wave
D=1/3
D=1/2
DC
0.03
0.02
0.01
0
0
Io
0
tp
T
D = ^tp
T
20 40 60 80 100 120
Average rectified current Io (mA)
Fig3. Forward power dissipation vs. Average rectified current
0.08
0.07
VR is two device total
20h×15w×0.8t
DC
0.06
0.05
0.04
0.03
1.5 _{Unit: mm}
0
VR
tp
T
D = ^tp
T
0.02
D=5/6
D=2/3
D=1/2
sin wave
0.01
0
0 5 10 15 20 25 30
Peak reverse voltage V_RM (V)
Fig4. Forward power dissipation vs. Peak reverse voltage
Rev.2.00 May 10, 2005 page 3 of 5