HAT2282C Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2282C
Static Drain to Source on State Resistance
vs. Temperature
500
1.5 A ^{VGS = 2.5 V}
400
I_D = 0.5, 0.8 A
300
200
1.5 A
I_D = 0.5, 0.8 A
V_GS = 4.5 V
100
0
Pulse Test
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
80
16
I_D = 1.5 A
60
12
V_DD = 10 V
40
25 V
8
50 V
20
4
V_DD = 50 V
25 V
10 V
0
0
1
2
3
4
5
Gate Charge Qg (nc)
Reverse Drain Current vs.
Source to Drain Voltage
10
8
6
4.5 V
4
2.5 V
2
V_GS = 0 V
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Forward Transfer Admittance vs.
Drain Current
10
Tc = –25°C
75°C _25°C
1
0.1
0.1
V_DS = 10 V
Pulse Test
1
10
Drain Current I_D (A)
1000
Typical Capacitance vs.
Drain to Source Voltage
300
Ciss
100
30
Coss
10
Crss
3
V_GS = 0
f = 1 MHz
1
0 10 20 30 ₄₀ 50 60
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
V_GS = 4.5 V, V_DD = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
100 ^tf
td(off)
td(on)
10
tr
1
0.01
0.1
1
10
Drain Current I_D (A)
Rev.1.00 Jan 26, 2006 page 4 of 6