HAT2282C Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2282C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max Unit
Test conditions
Drain to Source breakdown voltage V_(BR)DSS 60
—
—
V
I_D = 10 mA, V_GS = 0
Gate to Source breakdown voltage V_(BR)GSS ±12
I_G = ±100 µA, V_DS = 0
Gate to Source leak current
I_GSS
—
—
±10
µA V_GS = ±10 V, V_DS = 0
Drain to Source leak current
I_DSS
—
—
1
µA V_DS = 60 V, V_GS = 0
Gate to Source cutoff voltage
V_GS(off)
0.4
—
1.4
V
V_DS = 10 V, I_D = 1 mA
Drain to Source on state resistance R_DS(on)
—
173
225
mΩ I_D = 0.8 A, V_GS = 4.5 V^Note3
R_DS(on)
—
207
290
mΩ I_D = 0.8 A, V_GS = 2.5 V^Note3
Forward transfer admittance
|y_fs|
2.3
3.5
—
S
I_D = 0.8 A, V_DS = 10 V ^Note3
Input capacitance
Ciss
—
200
—
pF V_DS = 10 V, V_GS = 0,
Output capacitance
Coss
—
25
—
pF ^{f = 1 MHz}
Reverse transfer capacitance
Crss
—
15
—
pF
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total Gate charge
Gate to Source charge
t_d(on)
—
10
—
ns I_D = 0.8 A
t_r
—
26
—
ns ^VGS ^{= 4.5 V, V}DD ^{= 10 V}
t_d(off)
—
30
—
ns ^{RL = 1.25 Ω, Rg = 4.7 Ω}
t_f
—
4
—
ns
Qg
—
2.4
—
nC V_DD = 10 V, V_GS = 4.5 V
Qgs
—
0.4
—
nC ^ID ^{= 1.5 A}
Gate to Drain charge
Qgd
—
0.6
—
nC
Body - Drain diode forward voltage
V_DF
—
0.8
1.1
V
I_F = 1.5 A, V_GS = 0 ^Note3
Notes: 3. Pulse test
Rev.1.00 Jan 26, 2006 page 2 of 6